The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Dec. 16, 2015
Applicant:
Samsung Electronics Co., Ltd.;
Inventors:
Doo-Young Lee, Seoul, KR;
Dohyoung Kim, Hwaseong-si, KR;
Johnsoo Kim, Hwaseong-si, KR;
Heungsik Park, Yongin-si, KR;
Hongsik Shin, Seoul, KR;
Younghun Choi, Incheon, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 29/401 (2013.01); H01L 29/4232 (2013.01); H01L 29/6653 (2013.01);
Abstract
A method of forming a semiconductor device includes forming a gate electrode on a substrate, forming a first spacer on a sidewall of the gate electrode, forming a second spacer on the first spacer, and forming a capping pattern on top surfaces of the gate electrode, the first spacer and the second spacer. An outer sidewall of the second spacer is vertically aligned with a sidewall of the capping pattern.