The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Mar. 05, 2014
Renesas Electronics Corporation, Kawasaki-shi, JP;
Tatsuo Nakayama, Kawasaki, JP;
Hironobu Miyamoto, Kawasaki, JP;
Yasuhiro Okamoto, Kawasaki, JP;
Ryohei Nega, Kawasaki, JP;
Masaaki Kanazawa, Kawasaki, JP;
Takashi Inoue, Kawasaki, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
To improve performance of a semiconductor device. For example, on the assumption that a superlattice layer is inserted between a buffer layer and a channel layer, a concentration of acceptors introduced into nitride semiconductor layers forming a part of the superlattice layer is higher than a concentration of acceptors introduced into nitride semiconductor layers forming the other part of the superlattice layer. That is, the concentration of acceptors introduced into the nitride semiconductor layers having a small band gap is higher than the concentration of acceptors introduced into the nitride semiconductor layers having a large band gap.