The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Dec. 28, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventor:
Jeffrey Junhao Xu, Jhubei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 21/8234 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 23/485 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 21/76855 (2013.01); H01L 21/823418 (2013.01); H01L 23/485 (2013.01); H01L 29/41725 (2013.01); H01L 29/458 (2013.01); H01L 29/78 (2013.01); H01L 29/7833 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method includes depositing a first metal layer on a native SiOlayer that is disposed on at least one of a source and a drain of a metal-oxide-semiconductor field-effect transistor (MOSFET). A metal oxide layer is formed from the native SiOlayer and the first metal layer, wherein the remaining first metal layer, the metal oxide layer, and the at least one of the source and the drain form a metal-insulator-semiconductor (MIS) contact.