The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Apr. 23, 2014
Shigenobu Maeda, Seongnam-si, KR;
Sung-bong Kim, Suwon-si, KR;
Chang-wook Moon, Seoul, KR;
Dong-hun Lee, Anyang-si, KR;
Hyung-soon Jang, Hwaseong-si, KR;
Sang-pil Sim, Seongnam-si, KR;
Shigenobu Maeda, Seongnam-si, KR;
Sung-Bong Kim, Suwon-si, KR;
Chang-Wook Moon, Seoul, KR;
Dong-Hun Lee, Anyang-si, KR;
Hyung-Soon Jang, Hwaseong-si, KR;
Sang-Pil Sim, Seongnam-si, KR;
Abstract
Semiconductor devices are provided. The semiconductor devices include a first fin; a first gate electrode intersecting the first fin; a first elevated source and/or drain on respective sides of the first gate electrode on the first fin; and a first field dielectric film adjacent the first fin. The first field dielectric film includes a first part below a top surface of the first fin and a second part protruding from the first part and above a top surface of the first fin that makes contact with the first elevated source and/or drain.