The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

Aug. 27, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Hak-Lay Chuang, Singapore, SG;

Cheng-Cheng Kuo, Hsinchu, TW;

Ching-Che Tsai, Zhubei, TW;

Ming Zhu, Singapore, SG;

Bao-Ru Young, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 27/02 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 21/027 (2006.01); H01L 21/8234 (2006.01); H01L 21/3213 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 21/0274 (2013.01); H01L 21/28123 (2013.01); H01L 21/32139 (2013.01); H01L 21/823456 (2013.01); H01L 27/092 (2013.01); H01L 29/41775 (2013.01); H01L 29/42356 (2013.01); H01L 29/66545 (2013.01); H01L 29/4966 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01);
Abstract

The present disclosure provides a semiconductor device. A first active region is formed in a substrate. The first active region is elongated in a first direction in a top view. A first gate is formed over the substrate. The first gate is elongated in a second direction in the top view. A portion of the first gate is located over the first active region. A second gate is formed over the substrate. The second gate is elongated in the second direction in the top view. A portion of the second gate is located over the first active region. The second gate is shorter than the first gate in the second direction.


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