The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

Oct. 16, 2014
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Luke England, Saratoga Springs, NY (US);

Christian Klewer, Dresden, DE;

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 24/09 (2013.01); H01L 23/522 (2013.01); H01L 24/06 (2013.01); H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/80 (2013.01); H01L 2224/03616 (2013.01); H01L 2224/05551 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06133 (2013.01); H01L 2224/08121 (2013.01); H01L 2224/08123 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80013 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80948 (2013.01); H01L 2224/80986 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06527 (2013.01);
Abstract

Methods for preparing 3D integrated semiconductor devices and the resulting devices are disclosed. Embodiments include forming a first and a second bond pad on a first and a second semiconductor device, respectively, the first and the second bond pads each having plural metal segments, the metal segments of the first bond pad having a configuration different from a configuration of the metal segments of the second bond pad or having the same configuration as a configuration of the metal segments of the second bond pad but rotated with respect to the second bond pad; and bonding the first and second semiconductor devices together through the first and second bond pads.


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