The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
May. 14, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jung-Gun You, Ansan-si, KR;
Wei-Hua Hsu, Seongnam-Si, TW;
Choong-Ho Lee, Yongin-si, KR;
Hyung-Jong Lee, Osan-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed on the first region and the second region, respectively, a first contact formed on the first transistor, and a second contact formed on the second transistor. The first contact includes a first work function control layer having a first thickness and a first conductive layer formed on the first work function control layer, the second contact includes a second work function control layer having a second thickness different from the first thickness and a second conductive layer formed on the second work function control layer, and the first contact and the second contact have different work functions.