The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Feb. 12, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jeong Ju Park, Hwaseong-si, KR;
Kyoungmi Kim, Anyang-si, KR;
Jaeho Kim, Yongin-si, KR;
Jungsik Choi, Seongnam-si, KR;
Abstract
The inventive concepts provide methods of forming a semiconductor device. The method includes forming a neutral layer having a photosensitive property and a reflow property on an anti-reflective coating layer, performing an exposure process and a development process on the neutral layer to form a preliminary neutral pattern at least partially exposing the anti-reflective coating layer, heating the preliminary neutral pattern to form a neutral pattern, forming a block copolymer layer on the neutral pattern, and heating the block copolymer layer to form a block copolymer pattern. The block copolymer pattern includes a first pattern disposed on the anti-reflective coating layer exposed by the neutral pattern, and a second pattern disposed on the neutral pattern and chemically bonded to the first pattern.