The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

Jun. 10, 2016
Applicant:

Hoya Corporation, Shinjuku-ku, Tokyo, JP;

Inventors:

Kazuhiro Hamamoto, Tokyo, JP;

Tatsuo Asakawa, Tokyo, JP;

Osamu Maruyama, Tokyo, JP;

Tsutomu Shoki, Tokyo, JP;

Assignee:

HOYA CORPORATION, Shinjuku-ku, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/48 (2012.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/48 (2013.01);
Abstract

This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)≧L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.


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