The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

May. 11, 2015
Applicant:

Kla-tencor Corporation, Milpitas, CA (US);

Inventors:

Rohan Gosain, San Jose, CA (US);

Somit Joshi, Sunnyvale, CA (US);

Assignee:

KLA-Tencor Corp., Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01); G01N 21/88 (2006.01); G06T 7/00 (2006.01); G01N 21/95 (2006.01); H01J 37/22 (2006.01); G01N 23/225 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01N 21/8851 (2013.01); G01N 21/9501 (2013.01); G01N 23/2251 (2013.01); G06T 7/001 (2013.01); H01J 37/222 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); G01N 2223/418 (2013.01); G01N 2223/6466 (2013.01); G01N 2223/66 (2013.01); G06T 2207/30148 (2013.01); H01J 2237/063 (2013.01); H01J 2237/24592 (2013.01);
Abstract

Various embodiments for generating a defect sample for electron beam review are provided. One method includes combining, on a defect-by-defect basis, one or more first attributes for defects determined by optical inspection of a wafer on which the defects were detected with one or more second attributes for the defects determined by optical review of the wafer thereby generating combined attributes for the defects. The method also includes separating the defects into bins based on the combined attributes for the defects. The bins correspond to different defect classifications. In addition, the method includes sampling one or more of the defects for the electron beam review based on the bins into which the defects have been separated thereby generating a defect review sample for the electron beam review.


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