The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Apr. 14, 2016
Applicant:
Innovative Micro Technology, Goleta, CA (US);
Inventor:
Benedikt Zeyen, Santa Barbara, CA (US);
Assignee:
Innovative Micro Technology, Goleta, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/18 (2010.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0067 (2013.01); B81C 1/00317 (2013.01); B81B 2201/0264 (2013.01); B81B 2201/047 (2013.01); B81B 2207/115 (2013.01); B81C 2201/013 (2013.01); B81C 2203/031 (2013.01);
Abstract
A first ion rich dielectric substrate with a patterned dielectric barrier and a oxidizable metal layer is anodically bonded to a second ion rich dielectric substrate. To bond the substrates, the oxidizable metal layer is oxidized. The dielectric barrier may inhibit the migration of these ions to the bondline, which might otherwise poison the bond strength. Accordingly, when joining the two substrates, a strong bond is maintained between the wafers.