The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2016

Filed:

May. 29, 2014
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Vladimir Korobov, San Mateo, CA (US);

John Ladd, Santa Clara, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 5/378 (2011.01); H04N 5/3745 (2011.01); H04N 9/04 (2006.01);
U.S. Cl.
CPC ...
H04N 5/378 (2013.01); H04N 5/37452 (2013.01); H04N 9/045 (2013.01);
Abstract

An image sensor may have control circuitry and an array of pixels having corresponding photodiodes. The pixels may be arranged into groups. Photodiodes in each of the groups may share a common charge storage region. Each photodiode has an associated sensitivity provided by a corresponding color filter element. The control circuitry may perform multiple charge transfer operations to transfer charge accumulated in high sensitivity photodiodes in the group to the shared charge storage region, may readout image signals corresponding to the transferred charge, and may combine the image signals to generate final image signals for the photodiodes. The control circuitry may transfer charge accumulated in low sensitivity photodiodes in the group to the shared charge storage region after the image signals generated by the high sensitivity photodiodes have been read out, thereby increasing the maximum signal to noise ratio of the low sensitivity photodiodes without causing charge blooming.


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