The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Jul. 13, 2015
Disco Corporation, Tokyo, JP;
Tasuku Koyanagi, Tokyo, JP;
DISCO CORPORATION, Tokyo, JP;
Abstract
In an optical device wafer, an optical device layer is formed over a front surface of an epitaxy substrate with the intermediary of a buffer layer composed of a Ga compound containing Ga. After a transfer substrate is joined to the optical device layer of the optical device wafer, a separation layer is formed at a boundary surface between the epitaxy substrate and the buffer layer by performing irradiation with a pulsed laser beam having such a wavelength as to be transmitted through the epitaxy substrate and be absorbed by the buffer layer from a back surface side of the epitaxy substrate. Thereafter, an ultrasonic horn that oscillates ultrasonic vibration is brought into contact with an outer circumferential part of the epitaxy substrate to vibrate the epitaxy substrate, and the epitaxy substrate is separated from the transfer substrate to transfer the optical device layer to the transfer substrate.