The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Jul. 11, 2013
Kabushiki Kaisha Toshiba, Tokyo, JP;
Kensuke Ota, Fujisawa, JP;
Toshinori Numata, Kamakura, JP;
Masumi Saitoh, Yokohama, JP;
Chika Tanaka, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device of an embodiment includes: an insulating film including: a first region extending in a first direction; second and third regions arranged at a distance from each other; and fourth and fifth regions each having a concave shape, the fourth and fifth regions each having a smaller film thickness than a film thickness of each of the first through third regions; a semiconductor layer formed in a direction from the fourth region toward the fifth region, the semiconductor layer having a smaller width than a width of each of source and drain regions, the semiconductor layer being connected to the source and drain regions; a gate electrode placed on the opposite side of a gate insulating film from the semiconductor layer on the first region; and a gate sidewall formed on a side face of the gate electrode.