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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9530886 B1

PDFFull Text
Date of Patent:
Dec. 27, 2016

Filed:

Dec. 21, 2015

Semiconductor device with epitaxial structure and manufacturing method thereof

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Yu-Ying Lin, Tainan, TW;

Chueh-Yang Liu, Tainan, TW;

Yu-Ren Wang, Tainan, TW;

Neng-Hui Yang, Hsinchu, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

David Nhu

Int. Cl.
CPC ...
H01L 27/01 (2006.01); H01L 27/12 (2006.01); H01L 31/0392 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 21/3065 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01); H01L 29/167 (2006.01); H01L 29/08 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/02636 (2013.01); H01L 21/26513 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 21/823418 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/167 (2013.01); H01L 29/66636 (2013.01);
Abstract

A semiconductor device includes a substrate, a gate structure, a spacer, and a plurality of hyper-sigma (Σ) shaped epitaxial stressors. The substrate includes a first semiconductor material, and the hyper-Σ shaped epitaxial stressors include the first semiconductor material and a second semiconductor material. A lattice constant of the second semiconductor material is different from a lattice constant of the first semiconductor material. The hyper-Σ shaped epitaxial stressors respectively include a first portion, a second portion and a neck physically connecting the first portion and the second portion. The first portion includes a pair of first tips pointing toward the gate structure in a cross-sectional view. The second portion includes a pair of second tips pointing toward the gate structure in the cross-sectional view. The neck includes a first slanted surface in the first portion and a second slanted surface in the second portion.

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