IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9530862 B1

PDFFull Text
Date of Patent:
Dec. 27, 2016

Filed:

Jul. 28, 2015

Semiconductor device having metal gate and manufacturing method thereof

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Po-Chao Tsao, New Taipei, TW;

Chien-Ting Lin, Hsinchu, TW;

Chien-Ming Lai, Tainan, TW;

Chi-Mao Hsu, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Theresa T Doan

Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/321 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 27/092 (2006.01); H01L 29/49 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/28088 (2013.01); H01L 21/28185 (2013.01); H01L 21/32115 (2013.01); H01L 21/823842 (2013.01); H01L 27/0922 (2013.01); H01L 29/42364 (2013.01); H01L 29/42376 (2013.01); H01L 29/4966 (2013.01); H01L 29/51 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/78 (2013.01); H01L 29/7833 (2013.01);
Abstract

A manufacturing method of semiconductor devices having metal gate includes following steps. A substrate having a first semiconductor device and a second semiconductor device formed thereon is provided. The first semiconductor device includes a first gate trench and the second semiconductor device includes a second gate trench. A first work function metal layer is formed in the first gate trench and the second gate trench. A portion of the first work function metal layer is removed from the second gate trench. A second work function metal layer is formed in the first gate trench and the second gate trench. The second work function metal layer and the first work function metal layer include the same metal material. A third work function metal layer and a gap-filling metal layer are sequentially formed in the first gate trench and the second gate trench.

Find Patent Forward Citations

Loading…