The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2016

Filed:

Dec. 13, 2015
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Zhibiao Zhou, Singapore, SG;

Shao-Hui Wu, Singapore, SG;

Chi-Fa Ku, Kaohsiung, TW;

Chen-Bin Lin, Taipei, TW;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01);
Abstract

A method for fabricating capacitor is disclosed. The method includes the steps of: providing a material layer; forming a patterned first conductive layer on the material layer, forming a first dielectric layer on the patterned first conductive layer; forming a second conductive layer and a cap layer on the first dielectric layer; removing part of the cap layer to form a spacer on the second conductive layer; and using the spacer to remove part of the second conductive layer for forming a trench above the patterned first conductive layer and fin-shaped structures adjacent to the trench.


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