The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Jun. 03, 2015
Applicant:
United Microelectronics Corporation, Hsinchu, TW;
Inventors:
Sung-Bin Lin, Hsinchu, TW;
Wen-Chung Chang, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11563 (2013.01); H01L 27/115 (2013.01); H01L 27/11517 (2013.01); H01L 27/11521 (2013.01); H01L 27/11526 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01); H01L 29/792 (2013.01);
Abstract
A method for manufacturing a non-volatile memory with SONOS memory cells, which includes steps of: providing a substrate; forming a first gate oxide layer and a first gate conductive layer onto the substrate; forming a MOS transistor gate by executing a photolithography process on the first gate conductive layer, and then forming an ONO structure on the substrate; and forming a second gate conductive layer on the ONO substrate, and then forming a NVM transistor gate by executing a photolithography process on the second gate conductive layer.