The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
May. 19, 2015
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Alan B. Botula, Essex Junction, VT (US);
Alvin J. Joseph, Williston, VT (US);
James A. Slinkman, Montpelier, VT (US);
Randy L. Wolf, Essex Junction, VT (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 23/24 (2006.01); H01L 23/34 (2006.01); H01L 29/78 (2006.01); H01L 23/367 (2006.01);
U.S. Cl.
CPC ...
H01L 23/34 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 29/665 (2013.01); H01L 29/78 (2013.01); H01L 29/7841 (2013.01); H01L 23/3677 (2013.01); H01L 2924/0002 (2013.01);
Abstract
An approach for sinking heat from a transistor is provided. A method includes forming a substrate contact extending from a first portion of a silicon-on-insulator (SOI) island to a substrate. The method also includes forming a transistor in a second portion of the SOI island. The method further includes electrically isolating the substrate contact from the transistor by doping the first portion of the SOI island.