The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2016

Filed:

Jan. 30, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Hemanth Jagannathan, Guilderland, NY (US);

Sanjay C. Mehta, Niskayuna, NY (US);

Junli Wang, Singerlands, NY (US);

Chun-Chen Yeh, Clifton Park, NY (US);

Stefan Schmitz, Ballston Spa, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28132 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/78 (2013.01); H01L 29/785 (2013.01);
Abstract

A field effect transistor device includes a fin including a semiconductor material arranged on an insulator layer, the fin including a channel region, a hardmask layer arranged partially over the channel region of the fin, a gate stack arranged over the hardmask layer and over the channel region of the fin, a metallic alloy layer arranged on a first portion of the hardmask layer, the metallic alloy layer arranged adjacent to the gate stack, and a first spacer arranged adjacent to the gate stack and over the metallic alloy layer.


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