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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9530641 B1

PDFFull Text
Date of Patent:
Dec. 27, 2016

Filed:

Nov. 11, 2013

Method for manufacturing semiconductor device, substrate processing apparatus, and recording medium

Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Takeo Hanashima, Toyama, JP;

Jie Wang, Toyama, JP;

Takaaki Noda, Toyama, JP;

Assignee:

HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Asok K Sarkar

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/3205 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/44 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); C23C 16/401 (2013.01); C23C 16/4412 (2013.01); C23C 16/455 (2013.01); C23C 16/45527 (2013.01); C23C 16/45546 (2013.01); C23C 16/52 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/28506 (2013.01); H01L 21/28562 (2013.01); H01L 21/32051 (2013.01);
Abstract

There is provided a method for manufacturing a semiconductor device, including: forming a film on a substrate by performing a cycle a prescribed number of times, the cycle including: (a) supplying a source gas to the substrate in a process chamber; (b) exhausting the source gas remained in the process chamber; (c) supplying a reactive gas to the substrate in the process chamber; and (d) exhausting the reactive gas remained in the process chamber, wherein in (a), the source gas is supplied into the process chamber in a state that exhaust of the process chamber is substantially stopped, and thereafter an inert gas is supplied into the process chamber in a state that exhaust of the process chamber and supply of the source gas are substantially stopped.

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