The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Apr. 27, 2015
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Yong-Kyu Lee, Hwaseong-Si, KR;
Dae-Seok Byeon, Seongnam-Si, KR;
Yeong-Taek Lee, Seoul, KR;
Chi-Weon Yoon, Seoul, KR;
Hyun-Kook Park, Anyang-Si, KR;
Hyo-Jin Kwon, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of operating a memory device, which includes of memory cells respectively arranged in regions where first signal lines and second lines cross each other, includes determining a plurality of pulses so that each of the plurality of pulses that are sequentially applied to a selected memory cell among the plurality of memory cells is changed according to a number of times of executing programming loops. In response to the change of the plurality of pulses, at least one of a first inhibit voltage and a second inhibit voltage is determined so that a voltage level of at least one of the first and second inhibit voltages that are respectively applied to unselected first and second signal lines connected to unselected memory cells among the plurality of memory cells is changed according to the number of times of executing the programming loops.