The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Feb. 21, 2007
Chien-hsun Lin, Hsinchu, TW;
An-kao Yang, Hsin-Chu, TW;
Jui-chung Peng, Hsin-Chu, TW;
Yao-wen Guo, Hsin-Chu, TW;
Chien-Hsun Lin, Hsinchu, TW;
An-Kao Yang, Hsin-Chu, TW;
Jui-Chung Peng, Hsin-Chu, TW;
Yao-Wen Guo, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for use in the manufacture of a microelectronic apparatus, the method comprising exposing a dummy field on a substrate by utilizing a lithographic scanner at a first speed, and exposing a production field on the substrate by utilizing the lithographic scanner at a second speed, where the first speed is substantially greater than the second speed. In a related embodiment, a method for use in the manufacture a microelectronic apparatus comprises exposing a non-critical layer of the apparatus by utilizing a lithographic scanner at a first speed, and exposing a critical layer of the apparatus by utilizing the lithographic scanner at a second speed, where the first speed is substantially greater than the second speed.