The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Apr. 22, 2015
Applicant:
Elite Semiconductor Memory Technology Inc., Hsinchu, TW;
Inventor:
Ming-Sheng Tung, Hsinchu, TW;
Assignee:
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H03L 1/00 (2006.01); H03L 1/02 (2006.01); G05F 1/10 (2006.01); H03K 3/03 (2006.01); H03K 3/011 (2006.01); G05F 1/46 (2006.01);
U.S. Cl.
CPC ...
H03L 1/022 (2013.01); G05F 1/10 (2013.01); G05F 1/465 (2013.01); H03K 3/011 (2013.01); H03K 3/0315 (2013.01); H03L 1/026 (2013.01);
Abstract
Disclosed is a method for enhancing temperature efficiency, used to enhance a temperature efficiency resulted from temperature changes in regard to an oscillating period of an oscillator. The method for enhancing temperature efficiency comprises the steps as follows: generating a PTAT current by using a bandgap circuit; generating a CTAT current by using a bandgap circuit; generating an output current, wherein the output current equals to PTAT current minus CTAT current; and providing the output current to an oscillator for generating an oscillating frequency.