The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Apr. 14, 2016
Gan Systems Inc., Ottawa, CA;
John Roberts, Kanata, CA;
Iain H. Scott, Ottawa, CA;
GaN Systems Inc., Ottawa, CA;
Abstract
Driver circuitry for switching systems comprising enhancement mode (E-Mode) GaN power transistors with low threshold voltage is disclosed. An E-Mode high electron mobility transistor (HEMT) Dhas a monolithically integrated GaN driver, comprising smaller E-Mode GaN HEMTs Dand D, and a discrete dual-voltage pre-driver. In operation, Dprovides the gate drive voltage to the gate of the GaN switch D, and Dclamps the gate of the GaN switch Dto the source, via an internal source-sense connection closely coupling the source of Dand the source of D. An additional source-sense connection is provided for the pre-driver. Boosting the drive voltage to the gate of Dproduces firm and rapid pull-up of Dand Dfor improved switching performance at higher switching speeds. High current handling components of the driver circuitry are integrated with the GaN switch and closely coupled to reduce inductance, while the discrete pre-driver can be thermally separated from the GaN chip.