The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Jan. 06, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Tsun-Kai Tsao, Hsin-Chu, TW;
Ming-Huei Shen, Hsin-Chu, TW;
Shih-Chang Liu, Hsin-Chu, TW;
Yeur-Luen Tu, Hsin-Chu, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); H01L 45/144 (2013.01); H01L 45/1683 (2013.01);
Abstract
A phase change memory ('PCM') cell is provided in accordance with some embodiments. The PCM includes a spacer defining a reaction area; a phase change material layer disposed within the reaction area; a protection layer disposed over the phase change material layer and within the reaction area defined by the spacer; and a capping layer disposed over the protection layer and the spacer.