The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Feb. 18, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Hao-Yeh Liu, Kaohsiung, TW;
Chien-Ming Lai, Tainan, TW;
Yu-Ping Wang, Taoyuan, TW;
Mon-Sen Lin, Ping-Tung County, TW;
Ya-Huei Tsai, Tainan, TW;
Ching-Hsiang Chiu, Yilan County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device and a method of forming the same, the semiconductor device include a substrate, and a first transistor, a second transistor and a third transistor all disposed on the substrate. The first transistor includes a first channel, and a first barrier layer and a first work function layer stacked with each other on the first channel. The second transistor includes a second channel, and a second barrier layer and a second work function layer stacked with each other. The third transistor includes a third channel and a third barrier layer and a third work function layer stacked with each other on the third channel, wherein the first barrier layer, the second barrier layer and the third barrier layer have different nitrogen ratio. The first, the second and the third transistors have different threshold voltages, respectively.