The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2016

Filed:

Jul. 17, 2012
Applicants:

Hideki Hirotsuru, Fukuoka, JP;

Hideo Tsukamoto, Fukuoka, JP;

Yosuke Ishihara, Fukuoka, JP;

Inventors:

Hideki Hirotsuru, Fukuoka, JP;

Hideo Tsukamoto, Fukuoka, JP;

Yosuke Ishihara, Fukuoka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); C25D 5/12 (2006.01); C25D 5/50 (2006.01); C25D 7/00 (2006.01); C23C 18/16 (2006.01); B32B 15/01 (2006.01); C22C 21/00 (2006.01); C22C 45/04 (2006.01); B22F 7/08 (2006.01); C22C 26/00 (2006.01); F28F 3/00 (2006.01); B22D 18/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3735 (2013.01); B22D 18/02 (2013.01); B22F 7/08 (2013.01); B32B 15/016 (2013.01); C22C 21/00 (2013.01); C22C 26/00 (2013.01); C22C 45/04 (2013.01); C23C 18/1653 (2013.01); C25D 5/12 (2013.01); C25D 5/50 (2013.01); C25D 7/00 (2013.01); F28F 3/00 (2013.01); H01L 23/3732 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Disclosed is a heat dissipating component for a semiconductor element, having a tabular body 0.4-6 mm in thickness containing 40-70 volume % of diamond particles, with the balance comprising metal of which the principal component is aluminum, and coated on both surfaces by a coating layer comprising metal of which the principal component is aluminum, or an aluminum-ceramic based composite material, to form an aluminum-diamond based composite body. On at least the two major surfaces thereof are formed, in order from the major surface side, (1) an amorphous Ni alloy layer 0.1-1 μm in film thickness, (2) an Ni layer 1-5 μm in film thickness, and (3) an Au layer 0.05-4 μm in film thickness, the ratio of the Ni alloy layer and the Ni layer (Ni alloy layer thickness/Ni layer thickness) being 0.3 or less.


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