The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2016

Filed:

Sep. 30, 2014
Applicant:

Sandisk Technologies Inc., Plano, TX (US);

Inventors:

Keisuke Izumi, Yokkaichi, JP;

Michiaki Sano, Ichinomiya, JP;

Hiroshi Sasaki, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76805 (2013.01); H01L 21/7688 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01);
Abstract

A method of making multi-level contacts includes providing an in-process multilevel device having a device region and a contact region including a stack of alternating sacrificial layers and insulating layers located over a major surface of a substrate. A contact mask having contact mask openings is provided over the stack, and a first over mask having first over mask openings is provided over the contact mask. A subset of the contact mask openings is substantially aligned with the first over mask openings. Contact openings are formed through the stack, wherein each of the contact openings extends substantially perpendicular to the major surface of the substrate to a respective one of the sacrificial layers. A plurality of electrically conductive via contacts is formed in the plurality of the contact openings.


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