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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9520497 B1

PDFFull Text
Date of Patent:
Dec. 13, 2016

Filed:

Nov. 25, 2015

Semiconductor devices including a stressor in a recess and methods of forming the same

Applicants:

Dong-suk Shin, Yongin-si, KR;

Chul-woong Lee, Suwon-si, KR;

Hoi-sung Chung, Hwaseong-si, KR;

Young-tak Kim, Hwaseong-si, KR;

Nae-in Lee, Seoul, KR;

Inventors:

Dong-Suk Shin, Yongin-si, KR;

Chul-Woong Lee, Suwon-si, KR;

Hoi-Sung Chung, Hwaseong-si, KR;

Young-Tak Kim, Hwaseong-si, KR;

Nae-In Lee, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Sonya D McCall Shepard

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/823412 (2013.01); H01L 21/823425 (2013.01); H01L 21/823468 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823864 (2013.01); H01L 27/088 (2013.01); H01L 29/045 (2013.01); H01L 29/0603 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/167 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/66568 (2013.01); H01L 29/66636 (2013.01); H01L 29/7833 (2013.01); H01L 29/7834 (2013.01);
Abstract

Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.

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