The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2016

Filed:

Feb. 03, 2015
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Fayaz Shaikh, Portland, OR (US);

Sirish Reddy, Hillsboro, OR (US);

Alice Hollister, Tigard, OR (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01J 37/32 (2006.01); C23C 16/458 (2006.01); C23C 16/52 (2006.01); C23C 16/50 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); C23C 16/458 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01L 21/02115 (2013.01); H01L 21/02274 (2013.01); H01L 21/3065 (2013.01); H01L 21/3085 (2013.01); H01L 21/3086 (2013.01);
Abstract

Systems and methods for depositing a metal-doped amorphous carbon hardmask film or a metal-doped amorphous silicon hardmask film includes arranging a substrate in a processing chamber; supplying a carrier gas to the processing chamber; supplying a hydrocarbon precursor gas or a silicon precursor gas to the processing chamber, respectively; supplying a metal-based precursor gas to the processing chamber; one of creating or supplying plasma in the processing chamber; and depositing a metal-doped amorphous carbon hardmask film or a metal-doped amorphous silicon hardmask film on the substrate, respectively.


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