The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2016

Filed:

May. 11, 2016
Applicant:

Ememory Technology Inc., Hsin-Chu, TW;

Inventor:

Chen-Hao Po, Hsinchu, TW;

Assignee:

EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/12 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/12 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01);
Abstract

A voltage switch circuit is connected to a memory cell of a non-volatile memory. When the non-volatile memory is in a program mode and the memory cell is a selected memory cell, two output terminals provide a high voltage. When the non-volatile memory is in the program mode and the memory cell is a non-selected memory cell, the two output terminals provide a medium voltage and a ground voltage. When the non-volatile memory is in an erase mode and the memory cell is the selected memory cell, the two output terminals provide the high voltage and the ground voltage. When the non-volatile memory is in the erase mode and the memory cell is the non-selected memory cell, the two output terminals provide the ground voltage. When the non-volatile memory is in a read mode, the two output terminals provide a read voltage.


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