The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2016

Filed:

Nov. 02, 2015
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventor:

Hyundai Park, Santa Clara, CA (US);

Assignee:

INTEL CORPORATION, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/30 (2006.01); H01S 5/343 (2006.01); H01S 5/026 (2006.01); H01S 5/042 (2006.01); H01S 5/10 (2006.01); H01S 5/20 (2006.01); B82Y 20/00 (2011.01); G02B 6/122 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3013 (2013.01); B82Y 20/00 (2013.01); H01S 5/026 (2013.01); H01S 5/0422 (2013.01); H01S 5/1032 (2013.01); H01S 5/2027 (2013.01); H01S 5/343 (2013.01); H01S 5/34306 (2013.01); G02B 6/122 (2013.01);
Abstract

Described are embodiments of apparatuses and systems including a hybrid laser including anti-resonant waveguides, and methods for making such apparatuses and systems. A hybrid laser apparatus may include a first semiconductor region including an active region of one or more layers of semiconductor materials from group III, group IV, or group V semiconductor, and a second semiconductor region coupled with the first semiconductor region and having an optical waveguide, a first trench disposed on a first side of the optical waveguide, and a second trench disposed on a second side, opposite the first side, of the optical waveguide. Other embodiments may be described and/or claimed.


Find Patent Forward Citations

Loading…