The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Dec. 29, 2015
International Business Machines Corporation, Armonk, NY (US);
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Anthony J. Annunziata, Stamford, CT (US);
Chandrasekaran Kothandaraman, New York, NY (US);
Gen P. Lauer, Yorktown Heights, NY (US);
JungHyuk Lee, Seoul, KR;
Nathan P. Marchack, White Plains, NY (US);
Deborah A. Neumayer, Danbury, CT (US);
Eugene J. O'Sullivan, Nyack, NY (US);
Jeong-Heon Park, Seoul, SK;
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method of making a magnetic random access memory (MRAM) device comprising forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a first reference layer, a free layer, and a first tunnel barrier layer; and depositing an encapsulating silicon nitride film on and along sidewalls of the magnetic tunnel junction; wherein the silicon nitride film has a N:Si ratio from 0.1 to 1. An MRAM device made by the above method is also disclosed.