The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Mar. 04, 2015
Infineon Technologies Austria Ag, Villach, AT;
Maria Reiner, Villach, AT;
Clemens Ostermaier, Villach, AT;
Peter Lagger, Rothenthurn, AT;
Gerhard Prechtl, Rosegg, AT;
Oliver Haeberlen, Villach, AT;
Josef Schellander, Villach, AT;
Guenter Denifl, Annenheim, AT;
Michael Stadtmueller, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A substrate having a buffer layer and a barrier layer is formed. The buffer and barrier layers have different bandgaps such that an electrically conductive channel comprising a two-dimensional charge carrier gas arises at an interface between the buffer and barrier layers due to piezoelectric effects. The substrate is placed in a fluorine containing gas mixture that includes free radical state fluorine particles and is substantially devoid of ionic state fluorine particles. A first lateral surface section of the substrate is exposed to the gas mixture such that the free radical state fluorine particles contact the first lateral surface section without penetrating the substrate. A semiconductor device that incorporates first lateral surface section in the structure of the device is formed in the substrate.