The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Jun. 04, 2015
Infineon Technologies Ag, Neubiberg, DE;
Frank Dieter Pfirsch, Munich, DE;
Holger Huesken, Munich, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes an active region and a semiconductor substrate layer having a lower part semiconductor layer of a second conductivity type. The active region includes a drift region formed by at least a part of the substrate layer, a body region of the second conductivity type formed on at least a part of the drift region, a source region of a first conductivity type disposed in the body region, and a first doped region of the first conductivity type at least partially disposed under the body region. A groove extends downward from a top of the substrate layer and contains a shielding electrode. A depth of the groove is greater than that of the first doped region. A gate at least partially formed above at least a part of the source region and the body region is electrically insulated from the shielding electrode.