The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Jan. 20, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Andy C. Wei, Queensbury, NY (US);
Jeong Soo Kim, Clifton Park, NY (US);
Francis M. Tambwe, Malta, NY (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 21/762 (2006.01); H01L 27/088 (2006.01); H01L 21/308 (2006.01); H01L 27/02 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 21/3086 (2013.01); H01L 21/76224 (2013.01); H01L 27/0207 (2013.01); H01L 27/0886 (2013.01); H01L 21/823431 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/54406 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A device disclosed herein includes a plurality of spaced-apart fin structures formed in a semiconductor substrate so as to define an alignment/overlay mark trench. An alignment/overlay mark includes at least one insulating material positioned within the alignment/overlay mark trench. The alignment/overlay mark is devoid of any of the fin structures.