The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Apr. 15, 2016
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Francois Andrieu, Saint-Ismier, FR;
Denis Rideau, Grenoble, FR;
Abstract
A process for fabricating field-effect transistors, including providing a first semiconductor band surmounted with a first semiconductor layer; providing a second semiconductor band surmounted with a second semiconductor layer; providing a buried insulating layer; providing a deep trench isolation passing through the buried insulating layer and isolating the first semiconductor band from the second semiconductor band; etching the first semiconductor band so as to form a first row of semiconductor islands; etching the second semiconductor band so as to form a second row of semiconductor islands; and forming sacrificial gates on the first semiconductor layer and on the second semiconductor layer.