The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Jul. 15, 2015
Applicant:
Integrated Silicon Solution, Inc., Milpitas, CA (US);
Inventors:
Sung Jin Yoo, San Jose, CA (US);
Guowei Wang, San Jose, CA (US);
Assignee:
Integrated Silicon Solution, Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 16/28 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/28 (2013.01); G11C 16/3454 (2013.01); G11C 16/3468 (2013.01); G11C 2211/5622 (2013.01); G11C 2211/5624 (2013.01); G11C 2211/5625 (2013.01);
Abstract
A flash memory device employs a low current auto-verification programming scheme using multi-step programming voltage and cell current detection. The low current auto-verification programming scheme performs programming of memory cells by the application of programming voltages in step increments. For each programming pulse, the cell current of the memory cell is sensed to determine when the memory cell is programmed. The programming pulse is terminated when the cell current decreases below a reference current level.