The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Dec. 02, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chue San Yoo, Hsin-Chu, TW;
Chun-Lang Chen, Madou Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A first embodiment is a lithography mask comprising a transparent substrate and a first molybdenum silicon nitride (MoSiN) layer. The first MoSiNlayer is over the transparent substrate. A percentage of molybdenum (x) of the first MoSiNlayer is between 1 and 2. A percentage of silicon (y) of the first MoSiNlayer is between 50 and 55. A percentage of nitride (z) of the first MoSiNlayer is between 40 and 50. The first MoSiNlayer has an opening therethrough.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile