The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2016

Filed:

Jun. 04, 2015
Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Xueti Tang, Fremont, CA (US);

Jangeun Lee, Cupertino, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/00 (2006.01); G11C 11/16 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);
Abstract

A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free and pinned layers each has a layer perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. At least one of the pinned layer and the free layer includes a multilayer. The multilayer includes at least one bilayer. Each of the bilayer(s) has a first layer and a second layer. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes an amorphous magnetic layer. The multilayer has a nonzero perpendicular magnetic anisotropy up to at least four hundred degrees Celsius.


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