The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Jul. 29, 2013
Epistar Corporation, Hsinchu, TW;
Chih-Chiang Lu, Hsinchu, TW;
Yi-Ming Chen, Hsinchu, TW;
Chun-Yu Lin, Hsinchu, TW;
Ching-Pei Lin, Hsinchu, TW;
Chung-Hsun Chien, Hsinchu, TW;
Chien-Fu Huang, Hsinchu, TW;
Hao-Min Ku, Hsinchu, TW;
Min-Hsun Hsieh, Hsinchu, TW;
Tzu-Chieh Hsu, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.