The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Jul. 11, 2013
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Hidenori Fujii, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 29/868 (2006.01); H01L 27/06 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 23/34 (2006.01);
U.S. Cl.
CPC ...
H01L 29/868 (2013.01); H01L 21/02532 (2013.01); H01L 21/02667 (2013.01); H01L 21/324 (2013.01); H01L 27/0629 (2013.01); H01L 27/0664 (2013.01); H01L 29/6609 (2013.01); H01L 29/7397 (2013.01); H01L 23/34 (2013.01); H01L 2924/0002 (2013.01);
Abstract
An IGBT () is formed in a semiconductor substrate (). A temperature sense diode () made of polysilicon or amorphous silicon is formed on the semiconductor substrate (). After forming the IGBT (), the temperature sense diode () is divided into a plurality of diodes by selectively oxidizing or sublimating part of the temperature sense diode (). Thus, influences of variations in finished dimension of polysilicon on the characteristics can be eliminated. As a result, it is possible to reduce the size while reducing characteristic variations.