The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Apr. 13, 2012
Akito Nishii, Tokyo, JP;
Katsumi Nakamura, Tokyo, JP;
Akito Nishii, Tokyo, JP;
Katsumi Nakamura, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A p-type anode layer () provided on an n-type drift layer () in the active region. A p-type diffusion layer () is provided on the n-type drift layer () in a termination region outside the active region. An oxide film () covers an outer periphery of the p-type anode layer (). An anode electrode () is connected to a portion of the p-type anode layer () not covered with the oxide film (). An n-type cathode layer () is provided below the n-type drift layer (). A cathode electrode () is connected to the n-type cathode layer (). An area of a portion of the p-type anode layer () covered with the oxide film () is 5 to 30% of a total area of the p-type anode layer ().