The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Mar. 18, 2016
Globalfoundries Inc., Grand Cayman, KY;
Ajey Poovannummoottil Jacob, Watervliet, NY (US);
Witold P. Maszara, Morgan Hill, CA (US);
Jody A. Fronheiser, Delmar, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
One method of forming epi semiconductor cladding materials in the channel region of a semiconductor device is disclosed which includes forming a sacrificial gate structure around a portion of an initial fin, forming a sidewall spacer adjacent opposite sides of the sacrificial gate structure and removing the sacrificial gate structure so as to thereby define a replacement gate cavity, performing an etching process through the replacement gate cavity to remove portions of the initial fin so as to thereby define a reduced size fin and recesses under the sidewall spacers, forming at least one replacement epi semiconductor cladding material around the reduced size fin in the replacement gate cavity and in the recesses under the sidewall spacers, and forming a replacement gate structure within the replacement gate cavity around the at least one replacement epi semiconductor cladding material.