The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Oct. 21, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/782 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01); H01L 21/265 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/3115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66575 (2013.01); H01L 21/02532 (2013.01); H01L 21/265 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01); H01L 21/28088 (2013.01); H01L 21/31155 (2013.01); H01L 29/4925 (2013.01); H01L 29/4966 (2013.01); H01L 29/512 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01); H01L 29/7833 (2013.01);
Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate; forming a lightly doped drain in the substrate; and performing a first implantation process for implanting fluorine ions at a tiled angle into the substrate and part of the gate structure.