The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
May. 07, 2015
United Microelectronics Corporation, Hsinchu, TW;
Yen-Ming Chen, New Taipei, TW;
Chiuling Lee, Hsinchu, TW;
Min-Hsuan Tsai, Tainan, TW;
Zheng Hong Chen, Taoyuan, TW;
Wei Hsuan Chang, Tainan, TW;
Tseng-Hsun Liu, Taipei, TW;
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Abstract
The present invention provides a transistor comprising a substrate having a surface; a first deep well region in the substrate; a second deep well region in the substrate, isolated from and encircling the first deep well region; a first well region in the substrate and on the first deep well region; two second well regions in the second deep well region and respectively at two opposite sides of the first well region; a source region in the first well region and adjacent to the surface; two drain regions in the two second well regions respectively and adjacent to the surface; two gate structures on the surface, wherein each of the two gate structures is between the source region and one of the drain regions respectively; and a guard ring in the substrate encircling the second deep well region, and on the periphery of the transistor.