The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Apr. 29, 2014
Applicant:
Fudan University, Shanghai, CN;
Inventors:
Assignee:
Fudan University, Shanghai, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/336 (2006.01); H01L 21/4763 (2006.01); H01L 29/423 (2006.01); H01L 27/115 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/265 (2006.01); H01L 21/285 (2006.01); H01L 29/49 (2006.01); H01L 29/40 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42324 (2013.01); H01L 21/265 (2013.01); H01L 21/28273 (2013.01); H01L 21/28525 (2013.01); H01L 21/3085 (2013.01); H01L 21/3086 (2013.01); H01L 21/30604 (2013.01); H01L 27/11521 (2013.01); H01L 27/11556 (2013.01); H01L 29/401 (2013.01); H01L 29/4916 (2013.01); H01L 29/66825 (2013.01); H01L 29/66356 (2013.01); H01L 29/7391 (2013.01);
Abstract
The disclosure, belonging to the technological field of semiconductor memory, specifically relates to a semi-floating-gate device which comprises at least a semiconductor substrate, a source region, a drain region, a floating gate, a control gate, a perpendicular channel region and a gated p-n junction diode used to connect the floating gate and the substrate. The semi-floating-gate device disclosed in the disclosure using the floating gate to store information and realizing charging or discharging of the floating gate through a gated p-n junction diode boasts small unit area, high chip density, low operating voltage in data storage and strong ability in data retain.