The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Dec. 26, 2014
Applicant:
Episil Technologies Inc., Hsinchu, TW;
Inventors:
Assignee:
Episil Technologies Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 29/402 (2013.01); H01L 29/8611 (2013.01); H01L 29/8613 (2013.01);
Abstract
A structure for suppressing current leakage and a semiconductor device including the same are provided. The structure for suppressing current leakage includes a substrate of a first conductivity type, a well region of the first conductivity type, an isolation structure and a PN junction diode. The well region is disposed in the substrate. The isolation structure is disposed on the well region. The PN junction diode is disposed on the isolation structure and configured to suppress current leakage of the semiconductor device.