The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Jan. 07, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Tsung-Chieh Tsai, Chu-Bei, TW;
Yung-Che Albert Shih, Hsinchu, TW;
Jyh-Kang Ting, Baoshan Township, TW;
Juing-Yi Wu, Hsinchu, TW;
Liang-Yao Lee, Taoyuan, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/088 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0607 (2013.01); H01L 21/76224 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 29/0649 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01);
Abstract
A semiconductor device comprises a non-conductive gate feature over a substrate, and a metal gate electrode over the substrate. The metal gate electrode comprises a portion over an active region of the substrate, and a portion over an isolation feature of the substrate ending at an end cap. A vertical profile of the metal gate electrode at the end cap matches a vertical profile of the metal gate electrode in the portion over the active region.