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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9508791 B1

PDFFull Text
Date of Patent:
Nov. 29, 2016

Filed:

Jan. 07, 2016

Semiconductor device having a metal gate

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tsung-Chieh Tsai, Chu-Bei, TW;

Yung-Che Albert Shih, Hsinchu, TW;

Jyh-Kang Ting, Baoshan Township, TW;

Juing-Yi Wu, Hsinchu, TW;

Liang-Yao Lee, Taoyuan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., , TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Thao P Le

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/088 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0607 (2013.01); H01L 21/76224 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 29/0649 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device comprises a non-conductive gate feature over a substrate, and a metal gate electrode over the substrate. The metal gate electrode comprises a portion over an active region of the substrate, and a portion over an isolation feature of the substrate ending at an end cap. A vertical profile of the metal gate electrode at the end cap matches a vertical profile of the metal gate electrode in the portion over the active region.

Find Patent Forward Citations

Tsai, Tsung-Chieh. (2016). Semiconductor device having a metal gate (U.S. Patent No. 9508791). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9508791

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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